TSOP51.. vishay semiconductors not for new designs 1 (10) www.vishay.com document number 82162 rev. 2, 05nov01 photo module for high data rates pcm remote control systems available types for different carrier frequencies type fo type fo TSOP5130 30 khz TSOP5133 33.0 khz TSOP5136 36 khz TSOP5137 36.7 khz TSOP5138 38 khz TSOP5140 40.0 khz TSOP5156 56 khz description the TSOP51.. series are miniaturized smdir receiver modules for infrared remote control systems. pin diode and preamplifier are assembled on lead frame, the epoxy package is designed as ir filter. the demodulated output signal can directly be decoded by a microprocessor. TSOP51.. is the standard ir remote control smdreceiver series, supporting all major transmission codes. 16797 features photo detector and preamplifier in one package internal filter for pcm frequency continuous data transmission possible ttl and cmos compatibility output active low low power consumption enhanced data rate of 3500 bit/s operation with short burst possible ( 6 cycles/burst) taping available for topview and sideview assembly block diagramm 16798 pin input agc control circuit band pass demodu- lator 30 k 1 4 3 v s out gnd
TSOP51.. vishay semiconductors not for new designs www.vishay.com 2 (10) rev. 2, 05nov01 document number 82162 absolute maximum ratings t amb = 25 c parameter test conditions symbol value unit supply voltage pin 4 v s 0.3...6.0 v supply current pin 4 i s 5 ma output voltage pin 3 v o 0.3...6.0 v output current pin 3 i o 15 ma junction temperature t j 100 c storage temperature range t stg 40...+85 c operating temperature range t amb 25...+85 c power consumption t amb 85 c p tot 50 mw basic characteristics t amb = 25 c parameter test conditions symbol min. typ. max. unit supply current v s = 5 v, e v = 0 i sd 0.8 1.1 1.5 ma supply current v s = 5 v, e v = 40 klx, sunlight i sh 1.4 ma supply voltage vs 4.5 5.5 v transmission distance e v = 0, test signal see fig.7, ir diode tsal6200, i f = 400 ma d 30 m output voltage low (pin 3) i osl = 0.5 ma,e e = 0.7 mw/m 2 v osl 250 mv irradiance (3040 khz) pulse width tolerance: t 5/f TSOP51.. 4 3 1 4.7 f *) c >10 k optional 100 *) +5v gnd 2 gnd *) recommended to suppress power supply disturbances **) the output voltage should not be hold continuously at a voltage below 3.3v by the external circuit. **)
TSOP51.. vishay semiconductors not for new designs 3 (10) www.vishay.com document number 82162 rev. 2, 05nov01 suitable data format the circuit of the TSOP51.. is designed in that way that unexpected output pulses due to noise or disturbance signals are avoided. a bandpassfilter, an integrator stage and an automatic gain control are used to suppress such disturbances. the distinguishing mark between data signal and disturbance signal are carrier frequency, burst length and duty cycle. the data signal should fullfill the following condition: carrier frequency should be close to center frequency of the bandpass (e.g. 38khz). burst length should be 6 cycles/burst or longer. after each burst which is between 6 cycles and 70 cycles a gap time of at least 10 cycles is neccessary. for each burst which is longer than 1.8 ms a corresponding gap time is necessary at some time in the data stream. this gap time should have at least same length as the burst. up to 2200 short bursts per second can be received continuously. some examples for suitable data format are: nec code, toshiba micom format, sharp code, rc5 code, rc6 code, rcmm code, r2000 code, recs80 code. when a disturbance signal is applied to the TSOP51.. it can still receive the data signal. however the sensitivity is reduced to that level that no unexpected pulses will occure. some examples for such disturbance signals which are suppressed by the TSOP51.. are: dc light (e.g. from tungsten bulb or sunlight) continuous signal at 38khz or at any other frequency signals from fluorescent lamps with electronic ballast (an example of the signal modulation is in the figure below). 0 5 10 15 20 time [ms]
TSOP51.. vishay semiconductors not for new designs www.vishay.com 4 (10) rev. 2, 05nov01 document number 82162 typical characteristics (t amb = 25 c, unless otherwise specified) 0.7 0.8 0.9 1.0 1.1 e / e rel. responsitivity e min f/f 0 relative frequency 1.3 94 9102 0.0 0.2 0.4 0.6 0.8 1.0 e 1.2 f = f 0 5% f ( 3db ) = f 0 /7 figure 1. frequency dependence of responsivity 0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.1 1.0 10.0 100.0 1000.0 10000.0 e e irradiance ( mw/m 2 ) 12751 po t output pulse length (ms) input burst duration = 950 nm, optical test signal, fig.7 figure 2. pulse length and sensitivity in dark ambient 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0.01 0.10 1.00 10.00 100.00 e dc irradiance (w/m 2 ) 96 12111 e min e threshold irradiance (mw/m ) 2 correlation with ambient light sources (disturbanceeffect):10w/m 2 1.4klx (stand.illum.a,t=2855k) 8.2klx (daylight,t=5900k) ambient, = 950 nm figure 3. sensitivity in bright ambient 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0.0 0.5 1.0 1.5 2.0 e field strength of disturbance (kv/m) 16802 e min e threshold irradiance (mw/m ) 2 figure 4. threshold irradiance vs. field strength of disturbance 0.01 0.1 1 10 100 0.1 1 10 1000 94 9106 v srms ac voltage on dc supply voltage (mv) e threshold irradiance ( mw/m ) e min 2 f = f 0 10 khz 100 hz 1 khz figure 5. sensitivity vs. supply voltage disturbances 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 30150 153045607590 t amb ambient temperature ( c ) 96 12112 e min e threshold irradiance (mw/m ) 2 sensitivity in dark ambient figure 6. sensitivity vs. ambient temperature
TSOP51.. vishay semiconductors not for new designs 5 (10) www.vishay.com document number 82162 rev. 2, 05nov01 e e t t pi *) t v o v oh v ol t po 2 ) t 14337 optical test signal (ir diode tsal6200, i f =0.4 a, n=6 pulses, f=f 0 , t=10 ms) output signal t d 1 ) 1 ) 3/f 0 < t d < 9/f 0 2 ) t pi 4/f 0 < t po < t pi + 6/f 0 *) t pi 6/fo is recommended for optimal function figure 7. output function e e t v o v oh v ol t 600 s 600 s t = 60 ms t on t off 94 8134 optical test signal output signal , ( see fig.10 ) figure 8. output function 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 102030405060708090 burstlength [number of cycles/burst] 16152 envelope duty cycle f = 38 khz figure 9. max. envelope duty cycle vs. burstlength 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 0.1 1.0 10.0 100.0 1000.0 10000.0 e e irradiance (mw/m 2 ) 12753 on off t ,t output pulse length (ms) t on = 950 nm, optical test signal, fig.8 t off figure 10. output pulse diagram 750 850 950 1050 0 0.2 0.4 0.6 0.8 1.2 s ( ) relative spectral sensitivity rel wavelength ( nm ) 1150 94 8408 1.0 figure 11. relative spectral sensitivity vs. wavelength 16801 0.4 0.2 0 0.2 0.4 0.6 0.6 0.9 0 30 10 20 40 50 60 70 80 1.0 0.8 0.7 d rel relative transmission distance figure 12. directivity
TSOP51.. vishay semiconductors not for new designs www.vishay.com 6 (10) rev. 2, 05nov01 document number 82162 operating instructions reflow soldering reflow soldering must be done within 48 hours stored under max. 30 c, 80% rh after opening envelop recommended soldering paste (composition: sn 63%, pb 37%) melting temperature 178 to 192 c apply solder paste to the specified soldering pads, by using a dispenser or by screen printing. recommended thickness of metal mask is 0.2 mm for screen printing. the recommended reflow furnace is a combinationtype with upper and lower heaters. set the furnace temperatures for pre-heating and heating in accordance with the reflow temperature profile as shown below. excercise extreme care to keep the maximum temperature below 230 c. the following temperature profile means the tempera ture at the device surface. since temperature dif fer ence occurs between the work and the surface of the circuit board depending on the pes of circuit board or reflow furnace, the operating conditions should be verified prior to start of operation. handling after reflow should be done only after the work surface has been cooled off. manual soldering use the 6/4 solder or the solder containing silver. use a soldering iron of 25 w or smaller. adjust the temperature of the soldering iron below 300 c. finish soldering within three seconds. handle products only after the temperature is cooled off. cleaning perform cleaning after soldering strictly in conformance to the following conditions: cleaning agent: 2-propanol (isopropyl alcohol). commercially available grades (industrial use) should be used. demineralized or distilled water having a resistivity of not less than 500 m corresponding to a conductivity of 2 ms/m. temperature and time: 30 seconds under the temperature below 50 c or 3 minutes below 30 c. ultrasonic cleaning: below 20 w. 94 8625 max. 160 c full line : typical dotted line : process limits max. 240 c 2 k/s 4 k/s ca. 230 c 215 c 10 s 50 100 150 200 250 300 0 50 100 150 200 250 time ( s ) temperature ( c ) lead temperature 90 s 120 s max. 40 s
TSOP51.. vishay semiconductors not for new designs 7 (10) www.vishay.com document number 82162 rev. 2, 05nov01 dimensions in mm 16776
TSOP51.. vishay semiconductors not for new designs www.vishay.com 8 (10) rev. 2, 05nov01 document number 82162 taping version TSOP51..tt 16584
TSOP51.. vishay semiconductors not for new designs 9 (10) www.vishay.com document number 82162 rev. 2, 05nov01 taping version TSOP51..tr 16585
TSOP51.. vishay semiconductors not for new designs www.vishay.com 10 (10) rev. 2, 05nov01 document number 82162 ozone depleting substances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (odss). the montreal protocol ( 1987) and its london amendments ( 1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substanc es. vishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2. class i and ii ozone depleting substances in the clean air act amendments of 1990 by the environmental protection agency (epa) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buyer use vishay telefunken products for any unintended or unauthorized application, the buyer shall indemnify vishay telefunken against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany telephone: 49 (0)7131 67 2831, fax number: 49 (0)7131 67 2423
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